MPS2907A vishay semiconductors formerly general semiconductor document number 88232 www.vishay.com 10-may-02 1 new product small signal transistor (pnp) features ?pnp silicon epitaxial planar transistor for switching and amplifier applications. ?on special request, this transistor is also manufactured in the pin configuration to-18. ?this transistor is also available in the sot-23 case with the type designation mmbt2907a. maximum ratings & thermal characteristics ratings at 25 c ambient temperature unless otherwise specified. parameter symbol value unit collector-base voltage v cbo 60 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 5.0 v collector current i c 600 ma power dissipation t a = 25 c p tot 625 mw derate above 25 c 5.0 mw/ c power dissipation t c = 25 c p tot 1.5 mw derate above 25 c 12 mw/ c thermal resistance junction to ambient air r ja 200 (1) c/w thermal resistance junction to case r jc 83.3 c/w junction temperature t j 150 c storage temperature range t s 55 to +150 c note: (1) valid provided that leads are kept at ambient temperature. mechanical data case: to-92 plastic package weight: approx. 0.18g packaging codes/options: e6/bulk 5k per container, 20k/box e7/4k per ammo mag., 20k/box 0.181 (4.6) min. 0.492 (12.5) 0.181 (4.6) 0.142 (3.6) 0.098 (2.5) max. ? 0.022 (0.55) bottom view to-226aa (to-92) dimensions in inches and (millimeters)
MPS2907A vishay semiconductors formerly general semiconductor www.vishay.com document number 88232 2 10-may-02 electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit v ce = 10v, i c = 0.1ma 75 v ce = 10v, i c = 1ma 100 dc current gain h fe v ce = 10v, i c = 10ma 100 v ce = 10v, i c = 150ma (1) 100 300 v ce = 10v, i c = 500ma (1) 50 collector-base breakdown voltage v (br)cbo i c = 10 a, i e = 0 60 v collector-emitter breakdown voltage (1) v (br)ceo i c = 10ma, i b = 0 60 v emitter-base breakdown voltage v (br)ebo i e = 10 a, i c = 0 5 v collector-emitter saturation voltage (1) v cesat i c = 150ma, i b = 15ma 0.4 v i c = 500ma, i b = 50ma 1.6 base-emitter saturation voltage (1) v besat i c = 150ma, i b = 15ma 1.3 v i c = 500ma, i b = 50ma 2.6 collector cut-off current i cev v eb = 0.5v, v ce = 30v 50 na collector cut-off current i cbo v cb = 50v, i e = 0 0.01 a v cb =50v,i e =0,t a =150 c 10 base cut-off current i bl v eb = 0.5v, v ce = 30v 50 na current gain-bandwidth product f t v ce = 20v, i c = 50ma 200 mhz f = 100mhz output capacitance c obo v cb = 10v, f = 1mhz, i e = 0 8.0 pf emitter-base capacitance c ibo v eb = 2.0v, f = 1mhz, i c =0 30 pf notes: (1) pulse test: pulse width 300 s, duty cycle 2.0%
MPS2907A vishay semiconductors formerly general semiconductor document number 88232 www.vishay.com 10-may-02 3 electrical characteristics (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit turn-on time t on i b1 = 15ma, i c = 150ma, 45 ns v cc = 30v delay time (see fig. 1) t d i b1 = 15ma, i c = 150ma, 10 ns v cc = 30v rise time (see fig. 1) t r i b1 = 15ma, i c = 150ma, 40 ns v cc = 30v turn-off time t off i b1 = i b2 = 15ma, 100 ns i c = 150ma, v cc = 6v storage time (see fig. 2) t s i b1 = i b2 = 15ma, 80 ns i c = 150ma, v cc = 6v fall time (see fig. 2) t f i b1 = i b2 = 15ma, 30 ns i c = 150ma, v cc = 6v switching time equivalent test circuit figure 1: delay and rise time test circuit figure 2: storage and fall time test circuit 200ns 1.0 k ? -30v 200 ? to oscilloscope with rise time 5.0 ns 200ns 1.0 k ? -6.0 v 37 ? to oscilloscope with rise time 5.0 ns input z o = 50 ? prf = 150 pps rise time 2.0 ns p.w. < 200 ns input z o = 50 ? prf = 150 pps rise time 2.0 ns p.w. < 200 ns 0 0 -16 v -30 v 50 ? +15 v 50 ? 1.0 k ?
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